Hall Effect and Conductivity of InSb

Hall coefficient and conductivity of single-crystal InSb have been measured from 1.3^∘{}K to 700^∘{}K. Impurity band conduction and an acceptor ionization energy of 7×{}10^-3 ev have been observed in p-type InSb at low temperature. Variation of RH with H indicates a complicated valence band structure. Effective masses of $0.015m$ for electrons and approximately $0.17m$ for holes are consistent with mobility and low temperature Hall effect data. Lattice scattering mobilities are proportional to T^-1.68 for electrons and approximately T^-2.1 for holes. The intrinsic carrier concentration product is given by np=3.6×10²⁹T³exp(-0.26/kT) above 200^∘{}K. Eg at 0^∘{}K is between 0.26 and 0.29 ev.