We propose a novel alloy system of oxide semiconductors promising for unique multifunctions, the corundum structured Ga 2 O 3 ‐Cr 2 O 3 ‐Fe 2 O 3 alloys on sapphire substrates. With this system the optical band gap can be widely tuned from 2.2 to 5.3 eV while keeping the acceptable lattice mismatch. A key issue was to fabricate α‐Ga 2 O 3 thin films, which has been recognized as a sub‐stable phase and there is a strongly tendency of growing at β‐Ga 2 O 3 with traditional growth techniques, so the use of mist chemical vapor deposition (CVD) successfully overcame this problem and allows the growth of highly crystalline α‐Ga 2 O 3 . Following to our previous achievements of exploring the corundum structured Ga 2 O 3 ‐Fe 2 O 3 alloys, in this paper we have shown the growth of α‐Cr 2 O 3 thin films and α‐phase Ga 2 O 3 ‐Cr 2 O 3 alloys. The results encourage the evolution of the Ga 2 O 3 ‐Cr 2 O 3 ‐Fe 2 O 3 alloys but the existing problem of low solubility in water and high decomposition energy of the Cr precursor presently used, chromium acetylacetonate [(C 5 H 8 O 2 ) 3 Cr], should be overcome for accelerated research of this promising new alloy system. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Kaneko et al. (2010) studied this question.