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ZnO nanowires with high crystalline and optical properties are characterized, showing strong effect of the surface defect states. In order to optimize the performance of devices based on these nanowires, a series of complementary metal-oxide semiconductor compatible surface passivation procedures is employed. Electrical transport measurements demonstrate significantly reduced subthreshold swing, high on/off ratio, and unprecedented field effect mobility.
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Chang et al. (2006) studied this question.
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