The one-band density of states for the Polk model for amorphous semiconductors is found by direct diagonalization for a 201-atom structure and some smaller structures. It is seen that the density of states has a definite two-peaked character. Implications for the lower half of the valence band and the middle portion of the vibrational density of states in amorphous silicon and germanium are discussed.
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Alben et al. (1973) studied this question.
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