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at 68.1 nm. Transfer characteristic analysis conclusively confirmed metallic conduction behavior in the synthesized films. The temperature-dependent test showed the sheet resistance is insensitive to temperature change. This methodology establishes the efficacy of the atomic substitution method for fabricating non-layered 2D transition metal nitrides (TMNs) with enhanced functionality, offering crucial insights for developing next-generation nanoelectronics based on non-layered TMN architectures.
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Yang et al. (2025) studied this question.
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