Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
May 31, 2021Applied Physics Letters

Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment

View Full Paper
Ask AI
Bookmark
Share

Authors

NZN. ZhangLoudi Central HospitalFXFujun XuPeking UniversityJLJing LangPeking University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Zhang et al. (2021) studied this question.

synapsesocial.com/papers/6a7f700f9bfeca77b2111c52https://doi.org/10.1063/5.0042621
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Surface chemical and electronic properties of plasma‐treated n‐type Al0.5Ga0.5N2007 · 28 citations
  2. 213 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications2018 · 116 citations
  3. 3Survey of ultraviolet non-line-of-sight communications2014 · 128 citations