Competition between damage buildup and dynamic annealing in ion implantation into Ge

Channeling implantation of Ga into Ge is performed at two very different ion fluxes (1012 and 1019cm−2s−1), at two temperatures (room temperature and 250°C), and at five different fluences. The fluence dependence of the range profiles and of the implantation damage is strongly influenced by defect accumulation and dynamic annealing. At 250°C, the maximum lifetime of the defects is less than 10s. On the other hand, at room temperature no significant annealing is found within the first 10s after ion impact. The measured Ga depth profiles are reproduced very well by atomistic computer simulations.