The stability, efficiency, speed, and spectral range of light-emitting devices (LEDs) made of nanoscale porous silicon is improving. The first part of this paper discusses the preparation and properties of nanoscale silicon, with emphasis on porous silicon. In the second part, the properties of LEDs made of porous silicon are reviewed. In the third part, the integration of PSi LEDs with silicon microelectronic circuits is discussed. The paper ends with a short discussion of the prospects for realistic optoelectronic devices.
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Philippe M. Fauchet (1998) studied this question.
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