Answers are grounded in this paper and cite their sources.
A scanning-tunneling-microscopy-substitution technique is used to incorporate single Mn atoms into Ga sites in GaAs (110) surfaces. The electronic states near a single Mn in the acceptor configuration produce a strong in-gap resonance associated with the acceptor level. The isolated Mn acceptor is probed in both p-type and n-type environments to access the neutral and ionized acceptor configurations. The Mn acceptor at the surface substitution site shares bulk characteristics that compare well with tight-binding calculations. The anisotropic structure of the Mn hole state plays an important role in hole-mediated interactions between the Mn acceptors. Isolated Mn pairs show a strong interaction dependence on crystal orientation and spacing. Certain pair orientations produce a strong splitting of the acceptor level into two levels with bondinglike and antibondinglike symmetries. A tight-binding model relates the acceptor level splitting and the spin-spin interaction energy J.
No takes yet. Share an insight, caveat, or question.
Kitchen et al. (2007) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: