The electric-induced nanodamage in single ZnO nanowires was measured with a conductive atomic force microscope. The damage threshold voltage was estimated to be 7.0±0.5 V for the 5 nm nanowires. The thickness along a single nanowire during the damaging process can be accurately modulated by controlling the evaporation time and applied voltage in selected areas. The transverse conductance was found to increase as the heights of the single damaging nanowire increased, which is suggested to be attributed to the quantum confinement effect.
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Yang et al. (2009) studied this question.
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