We have investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using the RF magnetron sputtering method and annealing technique. Highly oriented ZnO film was first deposited on quartz glass substrate and then the ZnS:Mn film was successfully deposited on the highly oriented ZnO film. By annealing at 5% H 2 in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was improved. It was found that the addition of the ZnO buffer layer greatly improves the TrL intensity of the ZnS:Mn films.
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Onwona‐Agyeman et al. (2002) studied this question.
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