Resistance Switching and Failure Behavior of the MoOx/Mo₂C Heterostructure

With the rapid demand for high-performance and power-efficient memristive and synaptic systems, more 2D heterostructures with improved resistance switching (RS) properties are still urgently in need for next-generation devices. Here, we report the RS behaviors of vertical MoO x /Mo 2 C heterostructures fabricated by controllable thermal oxidation and uncover the failure behavior for the first time. It is found that the MoO x /Mo 2 C heterostructure exhibits bipolar RS with a low set/reset voltage of +0.5/–0.3 V, an ultralow power consumption of 5 × 10 –8 W, and an on/off ratio of 10 2, which is ascribed to the transport of the internal oxygen ions of MoO x . Furthermore, the failure behavior of RS behaviors of the MoO x /Mo 2 C heterostructure under a higher work voltage is revealed. It indicates that the amorphization of the pristine crystalline MoO x layer could block the movement of the internal oxygen ions in the vertical direction. The excellent RS performance induced by the synergy of MoO x and Mo 2 C and the demonstration of the failure behavior enable the potential applications of the 2D heterostructure in related memory devices and biological neural networks.