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Alloying of Au films on Cr-doped GaAs substrates and Sn-doped LPE layers grown on semi-insulating substrates has been investigated by TEM and SIMS profiling. Annealing at 350 °C for variable periods was found to produce rapid outdiffusion of Cr into regions of near-surface damage induced by strain effects at the interface and subsequent diffusion of Au into the GaAs.
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Magee et al. (1979) studied this question.
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