Electronic structure of InNxAs1−x alloys from tight-binding calculations

We present tight-binding band-structure calculations for InNxAs1−x alloys as a function of the nitrogen concentration. The high-concentration regime is found to be extremely sensitive to x. The low-concentration region (0<x<0.25) is of technological interest and is examined in detail. Effects of clustering, percolation, and the dependence of the energy gap on the assumed valence-band offsets on the band gap are reported.