Preparation and Electrical Conductivity of Li₂O-V₂O₅-SiO₂ Thin Films

Li 2 O-V 2 O 5 -SiO 2 , thin films were fabricated by the rf sputtering method. The X-ray diffraction patterns of the film annealed at 500–600°C agreed with the γ-Li 3 VO 4 phase powder pattern. The as-sputtered film had an orientation of the (001) plane parallel to the substrate. The electrical conductivity of the annealed film was higher than that of the as-sputtered film. The conductivity was 4.8×10 -3 S/m at 100°C, and the activation energy was 0.52 eV. The electronic transference number is 1.5×10 -4 .