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The effects of the supercell approximation in first-principles calculations for isolated, charged point defects in semiconductors and insulators are studied. The convergence of the Coulomb energy with respect to the supercell size is investigated. Quantitative numerical results for the standard uniform compensating charge and the newly proposed localized compensating charge scheme are presented for a prototypical defect, the doubly positive silicon self-interstitial.
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Lento et al. (2002) studied this question.