Room-temperature operation of InGaAsP-InP double-heterostructure lasers grown by atmospheric pressure metalorganic chemical vapour deposition is reported. Optically pumped laser operation at 1.36 μm and 1.45 μm has been achieved and broad-area injection lasers operating at 1.37 μm with threshold current densities as low as 3.6 kA/cm2 have been demonstrated.
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Dupuis et al. (1985) studied this question.