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The mechanism of oxidation of a porous silicon layer (PSL) was studied by examining the oxidation progress, the temperature dependence of the oxidation and the infrared absorption spectra. It is found that the oxidation of PSL is controlled by a surface reaction at both the surface of PSL and the wall of pores in PSL. The progress of the oxidation in PSL is altered at nearly 900°C. Si 2 O 3 as well as SiO 2 are produced by low temperature oxidation below 400°C and physically-absorbed water exists in an oxidized porous silicon (OPS) film formed by wet O 2 oxidation at temperatures below 700°C. Further, the properties of the OPS film are reported. Etching rate, dielectric constant, tan δ and breakdown strength of the OPS film are strongly dependent on the oxidation temperature, oxidation atmosphere and substrate resistivity. Thick OPS film, which has the same properties as thermal SiO 2 of bulk silicon, is formed in a short time by high temperature oxidation above 1000°C in wet O 2 .
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Takashi Unagami (1980) studied this question.
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