We prepared a Cr-Si-O film by co-sputter deposition and evaluated the properties with a view to applying to a strain gauge. It was found that the maximum gauge factor of 8.7 was obtained in the 200-nm-thick film at the composition of Cr-1 at. % Si-19 at. % O. In addition, the temperature coefficient of resistance of the film was 8 ppm/°C in the temperature range of 25–120 °C and the fractional change in resistance after annealing was less than ±0.1% up to 400 °C.
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Yamadera et al. (1989) studied this question.
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