Solution Synthesis of Colloidal Gallium Nitride at Unprecedented Low Temperatures

Free-standing colloids of gallium nitride have been synthesized from azide-based “single-source” precursors—molecules that contain both the metal and nitrogen—e.g., [Et2Ga(N3)]3. The solution synthesis is described and the examination of the resulting colloids by dynamic light scattering, transmission electron microscopy, etc. detailed. GaN is an important III–V semiconductor with applications in light-emitting diodes, lasers, sensors, and high-temperature electron devices, and it is suggested that in the future a solution preparation of such devices may become possible on the basis of GaN colloidal chemistry.