Mixed valence that induces superior dielectric properties of CdCu ₃ (Tb 1/2 Ta 1/2 ) x Ti 4− x O ₁₂ ceramics

This is the authors' abstract. We don't add key points for this paper.

, , and ). While the non-intrinsic effects are caused by the microstructure of the internal barrier layer capacitor, the impedance spectra show the presence of semiconductor grains as well as the huge resistance at the grain boundaries, where the heterogeneous structure causes an increase in grain boundary resistance. This study explores the dielectric response of a new type of giant dielectric ceramics and provides a new candidate for the fabrication of ceramic capacitors.