Random background charges and Coulomb blockade in one-dimensional tunnel junction arrays

We have numerically studied the behavior of one-dimensional tunnel junction arrays when random background charges are included using the ``orthodox'' theory of single-electron tunneling. Random background charge distributions are varied in both amplitude and density. The use of a uniform array as a transistor is discussed both with and without random background charges. An analytic expression for the gain near zero gate voltage in a uniform array with no background charges is derived. The gate modulation with background charges present is simulated.