A PbSe solution‐processed nanocrystal‐based infrared photodetector incorporating carrier blocking layers is demonstrated, and significant reduction of dark current is achieved. Detectivity values close to 10 12 Jones are achieved by using poly[(9,9′‐dioctylfluorenyl‐2,7‐diyl)‐ co ‐(4,4′‐( N ‐(4‐ sec ‐butyl))diphenylamine)] (TFB) and ZnO nanocrystals (NC) as the electron blocker and hole blocker, respectively. An improvement in lifetime is also observed in the devices with the ZnO NCs hole blocking layer.
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Sarasqueta et al. (2010) studied this question.
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