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A test element (TE) with an Ni-Fe point contact (PC) in planar configuration was fabricated using an etching process with a horizontal incidence ion beam. Successive in situ magnetoresistance (MR) measurements were carried out in the etching apparatus without breaking the vacuum to prevent the oxidation of the PC. The TE showed the MR ratio around 12%, which was much larger than an anisotropic MR ratio of the film. It showed low (high) resistance with a magnetic field direction of parallel (antiparallel) magnetic geometry of the pinned and free area.
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Y. Ohsawa (2005) studied this question.
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