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High-throughput exploration of electrode materials is demonstrated with an epitaxial thin-film device to determine the appropriate electrode materials for a resistance random access memory. In I–V measurements, only electrode pairs containing Al showed resistance switching (see figure). The disappearance of switching in the four-probe measurements suggests that switching occurs near the interface of the Al electrode and the Pr0.7Ca0.3MnO3 film.
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Tsubouchi et al. (2007) studied this question.
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