InGaAsP/InP buried-heterostructure lasers (λ = 1.5 μm) with chemically etched mirrors

Buried-heterostructure InGaAsP/InP lasers with chemically etched mirrors are fabricated successfully. The lasers emit light at ∼1.5 μm. The threshold current of these lasers is nearly the same as that of conventionally fabricated cleaved-mirror lasers. This fabrication procedure enables us to obtain low-threshold-current devices and allows a much wide variety of device design and fabrication compared with the conventional cleaving technique.