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Boron-implanted (100) Si (dose 1 × 1012 up to 5 × 1016 B/cm2, Eimpl = 50 keV) is annealed by flash-lamp pulses of 10 ms duration. The dependence of sheet resistance, electrical activation, and charge carrier mobility on implanted dose and energy density of the flash is investigated. The influence of an electrical solubility limit and of lattice disturbances are discussed.
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Wieser et al. (1984) studied this question.
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