A Modeling Study on Utilizing In2S3 as the Buffer Layer of Cu(In,Ga)Se2 Based Solar Cell

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In Cu(In 1 − x ,Ga x )Se (CIGS)-based solar cells, the cadmium sulfide (CdS) layer is conventionally used as a buffer layer. In the current study, the CdS layer was replaced by the Indium sulfide (In 2 S 3 ) layer, and the impact of various concentrations of Ga in the CIGS absorber, the band gap of the In 2 S 3 buffer layer, and the band gap of the Na y Cu 1−y In 5 S 8 interfacial layer on the efficiency of these CIGS solar cells were investigated. The results indicated that in the absence of Na y Cu 1−y In 5 S 8 , the optimal performance was obtained with an E g−In2S3 value of 3.1 eV and the ratio of Ga/(Ga + In) (GGI) = 1, yielding an efficiency of 21.97%. The formation of the Na y Cu 1−y In 5 S 8 interfacial layer deteriorated the efficiency of the device, and the highest efficiency of the CIGS solar cells with the interfacial layer was 16.33 %.