In this paper the characteristics of the graded band gap profiles of CIGS thin film solar cells are reviewed.Influence of the valence and conduction band grading of the absorber material on the main parameters of the cell is considered.A new graded band gap profile which exploits the widening of both the valence and conduction bands is proposed.Furthermore, the possibility of conduction band grading of the window material near the surface region to enhance the carrier transfer is discussed.
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Gorji et al. (2012) studied this question.
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