Dual-Surfactant Effect to Enhancep-Type Doping in III-V Semiconductor Thin Films

Surfactant effects are usually achieved by the addition of a single surface element. We demonstrate by first-principles calculations a dual-surfactant effect of Sb and H on enhancing Zn doping in organometallic vapor phase epitaxially grown GaP thin films. The combined effects of Sb and H lower significantly the doping energy of Zn in GaP, while neither Sb nor H can function alone as an effective surfactant. Our finding suggests a general strategy for enhancing p-type doping of III-V semiconductors by using a metallic-element with H as dual surfactants.