A parallel approach for fabricating nanocrystal-based semiconductor–insulator–metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 Å CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 μm2. Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices.
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Kim et al. (1999) studied this question.
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