The effects of Mn doping on the ferroelectric properties of Pb(Zr0.3Ti0.7)O3 (PZT) thin films on Pt/Ti/SiO2/Si substrates have been investigated. Doping in the range 0.2 ≤ x ≤ 1 mol% showed almost no hysteretic fatigue up to 1010 switching bipolar pulse cycles. Vacancy-related defects were detected using a variable-energy positron beam (VEPB). The results give evidence for a reduction in the concentration of vacancy defects with Mn doping for <1 mol% Mn. For 1–4 mol% Mn the vacancy concentration increases toward the undoped level. A model is given that proposes the vacancies affected are oxygen vacancies.
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Zhang et al. (2004) studied this question.
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