We have measured the tunneling characteristics (dV/dI and d²VdI² versus V) of thin film junctions of the form Al-I-M-Pb, where M is Ag, Cu, or Al. These tunneling characteristics have dips at voltages corresponding to peaks in the phonon density of states of M and peaks at voltages corresponding to the peaks in the phonon density of states of Pb. From the amplitude of the dips due to the phonons of M we can crudely estimate the electron-phonon coupling constant λM for Al and Cu.
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Chaikin et al. (1976) studied this question.
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