We detail a novel three dimensional (3D) patterning capability for focused ion beam technology which uses, as a resist, a gold cluster compound Au55(PPh3)12Cl6. The high-resolution 3D morphology of the patterned structures is examined and electrical characterization analyses are carried out. Patterns having minimal lateral dimension about 30 nm and vertical resolution below 10 nm, are displayed using this method. Direct writing speeds up to 3.6 103 μm/s were reached.
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Giérak et al. (1999) studied this question.
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