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Experimental study reveals reduced effective fixed charge density in 6H-SiC oxides following post-metallisation annealing, indicating improved interface quality for semiconductor fabrication.
The effect of post-metallisation annealing (PMA) on the effective fixed charge in thermally grown SiO2 on 6H-SiC has been systematically studied. It is found that under a carefully controlled and optimised PMA condition, it is possible to reduce the effective fixed charge density for both p-type and n-type samples. The study covers an annealing temperature range 400 – 600°C in forming gas (5% hydrogen in nitrogen) for both p-type and n-type 6H-SiC. The optimum annealing conditions are reported.
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Luo et al. (1998) studied this question.
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