High-resolution short range ion detectors based on 4H-SiC films

The energy resolution of SiC detectors has been studied in application to the spectrometry of α particles with 5.1–5.5 MeV energies. The Schottky barrier structure of the detector was based on a CVD-grown epitaxial n -4H-SiC film with a thickness of 26 μm and an uncompensated donor concentration of (1–2)×10 15 cm −3 . An energy resolution of 0.5% achieved for the first time with SiC detectors allows fine structure of the α particle spectrum to be revealed. The average energy of the electron-hole pair formation in 4H-SiC is estimated at 7.71 eV.