Fabrication of single-hole transistors on hydrogenated diamond surface using atomic force microscope

Nanofabrication of electron devices based on the stability of hydrogen- and oxygen-terminated diamond surfaces is performed using an atomic force microscope modification technology. A nanotechnology involving the separation of C–H and C–O bonded surfaces has been applied to realize the single-hole transistors. The single-hole transistors operate at liquid-nitrogen temperature (77 K), where the Coulomb oscillation characteristics are clearly observed.