Effects of some additives (V, Cr, Mn, Co, Ni, Pd, Pt) on thermoelectric properties of FeSi 2 thin films were studied. V, Cr or Mn-doped FeSi 2 films were of p-type semiconductor and Co, Ni, Pd and Pt-doped FeSi 2 films of n-type semiconductor. It was indicated that V or Cr are more suitable additives in thermoelectric properties of p-type FeSi 2 than Mn and that Pt is superior to other additives in thermoelectric properties of n-type FeSi 2 .
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Komabayashi et al. (1991) studied this question.
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