We deposited tantalum nitride (TaN) films by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta–N double bond in the precursor preserved the ‘‘TaN’’ portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 mΩ cm (deposited at 500 °C) to 920 μΩ cm (obtained at 650 °C). The carbon and oxygen concentrations were low in the films deposited at 600 °C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes.
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Tsai et al. (1995) studied this question.