Temperature Dependence of TaSiN Thin Film Resistivity from Room Temperature to 900°C

The conductivity of TaSiN thin film was investigated in a wide temperature range from room temperature to 900°C, and, based on the measurement, a new model for the temperature dependence of TaSiN thin film conductivity was proposed. TaSiN thin films were deposited on thermally oxidized Si wafers using reactive RF cosputtering. Resistivities of the films were measured from room temperature to 900°C by the four-contact probe method. All the films showed decreases in resistivity as temperature increased. The temperature dependence of conductivity at high temperature was described by a model with two conductors connected in parallel, one proportional to 1/ T , another proportional to the Arrhenius-type thermal activation term (exp (- E / kT )).