The quality factors of modes in nearly identical GaAs and Al0.18Ga0.82As microdisks are tracked over three wavelength ranges centered at 980, 1460, and 1600nm, with quality factors measured as high as 6.62×105 in the 1600nm band. After accounting for surface scattering, the remaining loss is due to sub-band-gap absorption in the bulk and on the surfaces. The observed absorption is, on average, 80% greater in AlGaAs than in GaAs and is 540% higher in both materials at 980nm than at 1600nm.
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