Generation of optical evanescent waves in vacuum‐deposited thin films of α‐oligothiophenes

The performance of oligothiophene‐based field‐effect transistors is thought to be dependent on the nature of the metal/semiconductor/insulator interfaces. The observation of evanescent optical waves in thin films of, for example, α‐6T (see Figure) provides a non‐destructive probe of the charge transfer processes taking place at these interfaces. magnified image