High-field electron capture and emission in nitrided oxides

High-field, constant current injection has been used to study electron trapping and reemission processes in ammonia-annealed (nitrided) silicon dioxide. The gate voltage during injection versus injected charge exhibits two rates. The first provides the capture cross section and trap density information. The second provides information on reemission of trapped charge by tunneling. From the tunneling data, the electron trap depth can be estimated to be 3.5–4 eV below the insulator conduction band. Nitrogen annealing reduces the density of these traps.