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We report a high detectivity of 3×1011 cm Hz1/2/W at 78 K for normal-incidence quantum dot infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs quantum dot active regions. The high detectivity seen at 1.4 V corresponds to photoresponse peaks at 9.3 and 8.7 μm for positive and negative bias, respectively.
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Kim et al. (2004) studied this question.
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