High responsivity AlAs/InAs/GaAs superlattice quantum dot infrared photodetector

The characteristics of quantum dot infrared photodetectors (QDIPs) in which InAs self-organised quantum dots are embedded in an AlAs/GaAs superlattice matrix are reported. An extremely large peak responsivity, Rp=2.5 A/W, is measured at T=78K for Vbias=−1.5 V. A dark current density as low as 3.2×10−4 A/cm2 for Vbias=−2.0 V is also measured at T=300K