We report InAs quantum dot infrared photodetectors that utilize In0.15Ga0.85As strain-relief cap layers. These devices exhibited normal-incidence photoresponse peaks at 8.3 or 8.8 μm for negative or positive bias, respectively. At 77 K and −0.2 V bias the responsivity was 22 mA/W and the peak detectivity D* was 3.2×109 cm Hz1/2/W.
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Ye et al. (2002) studied this question.
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