High-field drift velocity of holes in inversion layers on silicon

We report measurements of the room-temperature drift velocity of holes along the (100) Si-SiO2 interface (drift direction [011]) as obtained by a time-of-flight technique. Our measured values range up to 60% higher than previously reported values at comparable tangential and normal electric fields. An empirical equation that fits the low-field mobility and the high-field velocity as a function of tangential and normal fields is presented.