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Raman scattering results have been obtained from alternating monolayer structures of GaAs and AlAs fabricated synthetically by molecular beam epitaxy. Frequency shifts of the principal phonons have been observed, as well as new vibrational modes which result from zone-folding effects. The results suggest that ∼20–30% of the cation sites in the interface regions are disordered.
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Merz et al. (1977) studied this question.
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