Modulation-doped N-AlGaAs/GaAs/InAs/GaAs/InAs/GaAs heterostructures with InAs quantum dots (QDs) in the device channel have been grown and investigated. Their photoluminescence spectra and electron transport properties in both low and high electric fields were studied. Using these structures, modulation-doped field effect transistors have been fabricated and analysed. It was demonstrated that the QD field effect transistors present a new type of hot-electron device, promising for high-speed applications.
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Mokerov et al. (2001) studied this question.
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