Electron spin resonance evidence that E'/sub /spl gamma// centers can behave as switching oxide traps

We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide tap in thermally grown SiO/sub 2/ gate oxides on Si. Switching oxide traps can "switch" charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'/sub /spl gamma// centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.